| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor array panel capable of improving an image quality by removing the influence due to charges accumulated during processes, and to provide a manufacturing method of the thin-film transistor array panel. SOLUTION: The manufacturing method of the thin-film transistor array panel comprises a process of forming a thin-film transistor, including a gate electrode 124, a source electrode 173, a drain electrode 175 and a semiconductor layers 151, 154 on a substrate 110; a process of forming a first passivation film 180q on the thin-film transistor; a process of forming a transparent conductive film and a photoresist on the first passivation film 180q; a process of etching the transparent conductive film, by using the patterned photoresist as an etching mask to expose a part of the first passivation film 180q and to form a pixel electrode 190 connected to the drain electrode 175; a process of ashing the photoresist and the exposed first passivation film 180q for removing surface layer on the part where the first passivation film 180q is exposed, and thereby to remove the accumulated charges together; and a process of removing the photoresist. COPYRIGHT: (C)2006,JPO&NCIPI |
