| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof wherein its bonding pad can be prevented from being peeled from its silicon oxide film caused by the impact generated when bonding the pad. SOLUTION: The semiconductor device has a semiconductor substrate 1, a metal wiring 10 provided on the semiconductor substrate, an interlayer insulating film 30 provided above the semiconductor substrate 1, via hole so provided in the interlayer insulating film that its bottom surface becomes the top surface of the metal wiring 10, W plug 43 provided in each via hole, a titanium nitride film 50 provided on the interlayer insulating film 30, and a bonding pad 61 provided on the titanium nitride film 50. Further, no titanium film is provided between the interlayer insulating film 30 disposed under the bonding pad 61 and the titanium nitride film 50, but a titanium film 41 is provided both between the inner wall of each via hole and its bottom surface, and between its inner wall and each W plug 43. COPYRIGHT: (C)2006,JPO&NCIPI
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