| 摘要 |
PROBLEM TO BE SOLVED: To provide a low noise photodetector, especially a photodetector for X-ray CT devices capable of suppressing the number of AD converters and obtaining high-speed, low-noise and high-resolution signals. SOLUTION: A photodetector 1 is configured so as to connect a first photo diode D1 (PD) formed in the same semiconductor substrate 2 and a first field-effect transistor Q1 (NMOS). The photodetector 1 is provided with an insulating layer 3 formed on the semiconductor substrate 2, and a first wiring 5 (R1) that connects a first end (cathode) 4 and the first field-effect transistor Q1 of photo diode D1. The first wiring 5 which contains the above resistance R1 and parasitic capacitance is arranged on the insulating layer 3. The insulating layer 3 laminates an oxide film 3a and a second insulating layer 3b. COPYRIGHT: (C)2006,JPO&NCIPI
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