| 摘要 |
PROBLEM TO BE SOLVED: To perform setting of each mixed gas supplied to the center section and the periphery of a substrate in a treating room simply and properly for a short time. SOLUTION: The mixing ratio and the flow rate of the first mixed gas which is supplied to the center of the substrate are set. Then, in the state in which the setting of the first mixed gas is fixed, the mixing ratio of the second mixed gas supplied to the periphery of the substrate is changed, and etching is performed. From the etching result, the mixing ratio of the second mixed gas is set so that etch selectivity and etching profile may become equality between the center and the periphery of the substrate. Then, in the state that the setting of the first mixed gas and the setting of the mixed ratio of the second mixed gas are fixed, the flow rate of the second mixed gas is changed, and etching is performed. From the etching result, the flow rate of the second mixed gas is set so that the etching rate may become equality between the center section and the periphery of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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