| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a gate insulating film which has a high dielectric constant and in which an interface with a silicon substrate is stable, and to provide a manufacturing method of the device. SOLUTION: The semiconductor device is provided with a gate insulating film 13 formed of pyro ceramics which has an amorphous matrix layer 22 arranged on the main surface of the silicon substrate 11, and crystal 21 of the high dielectric constant dispersed in the amorphous matrix layer; and with a gate electrode 14 disposed on the gate insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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