发明名称 MEMORY CELL WITH STABILITY SWITCH FOR STABLE READ OPERATION AND IMPROVED WRITE OPERATION
摘要 A memory cell and method of destabilizing a memory cell for facilitating a write operation are provided. A stability switch is coupled between one of a voltage supply or a ground terminal and the memory cell, and is turned off during the write operation to reduce the drive voltage required to drive a bit value into the memory cell.
申请公布号 US2006171188(A1) 申请公布日期 2006.08.03
申请号 US20050906032 申请日期 2005.01.31
申请人 KAWASUMI ATSUSHI 发明人 KAWASUMI ATSUSHI
分类号 G11C11/00 主分类号 G11C11/00
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