Ferro electric RAM-memory cell manufacturing method, involves filling trenches with conductive electrode material to form capacitor electrodes so that electrodes in trenches with areas of ferroelectric layers form ferroelectric capacitor

摘要

The method involves applying a ferroelectric layer with a ferroelectric material on another ferroelectric layer. A structured etching mask is applied on the former layer. Trenches are etched by the former layer under application of the mask. The trenches are filled with a conductive electrode material to form capacitor electrodes so that capacitor electrodes in the trenches with the areas of the layers form a ferroelectric capacitor. An independent claim is also included for ferroelectric RAM-memory cells with ferroelectric capacitor for storing more than two states.