| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR IC DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost semiconductor IC device that incorporates an LDD MISFET capable of high-speed operation and an LDD MISFET capable of high-voltage drive. <P>SOLUTION: The MISFET capable of high-speed operation has a metal silicide layer in the self-aligned high concentration region of the gate sidewall layer. The MISFET capable of high-voltage drive has an LDD section with a greater width than that of the foregoing gate sidewall layer and a high concentration region adjacent to the LDD section, and has a metal silicide layer in the high concentration region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006203225(A) |
申请公布日期 |
2006.08.03 |
| 申请号 |
JP20060044671 |
申请日期 |
2006.02.22 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
TANIGUCHI YASUHIRO;YADORI SHOJI;KURODA KENICHI;IKEDA SHUJI;HASHIMOTO KOJI |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/3205;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L23/52;H01L27/088;H01L27/092;H01L27/10;H01L27/108;H01L27/11;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
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