发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is high in withstand voltage characteristics to prevent troubles caused by a leakage current in its operating state at a normal temperature. <P>SOLUTION: The semiconductor device is equipped with: an insulating board 18 provided with an upper electrode 16 and a lower electrode 17; a chip electrode; at least one conductive ring 36 going around the chip electrode; a semiconductor chip 21 supported on the insulating board 18; at least one conductive wire 42 extending outward from the chip electrode beyond the conductive ring 36; and a minimally charged part 38 covering a part of the conductive ring 36. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006202930(A) 申请公布日期 2006.08.03
申请号 JP20050012220 申请日期 2005.01.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIODA HIRONORI;MUTO HIROTAKA;MIZOJIRI TETSUO
分类号 H01L23/00 主分类号 H01L23/00
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