| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. SOLUTION: A method of producing a Group III nitride semiconductor light emitting device comprises a first step of epitaxially growing the Group III nitride semiconductor on a substrate to form a semiconductor wafer, a second step of irradiating the semiconductor wafer with a laser beam to form separation grooves, a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate, and a fourth step of division into individual chips by applying stress to the separation grooves. COPYRIGHT: (C)2006,JPO&NCIPI
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