| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an internal power source voltage generation circuit capable of stably generating an internal power source voltage. SOLUTION: There are provided active internal voltage step-down circuits 242 and 244 which are activated by responding to an activation of activation control signals corresponding to internal power source voltage lines 245a and 245b, respectively, to generate internal power source voltage in the corresponding internal power source lines. A non-stop voltage step-down circuit is provided between these internal power source lines, for generating current of internal power source voltage in the internal power source lines in an always operating state. Loads of the active internal voltage step-down circuits are reduced, and the internal power source voltage can be stably generated in the internal power source lines. Also, during stand-by, the internal power source lines can be stably maintained at a prescribed voltage level with less consumption current by the non-stop internal voltage step-down circuits. COPYRIGHT: (C)2006,JPO&NCIPI
|
