| 摘要 |
PROBLEM TO BE SOLVED: To solve a new problem occurred around an upper electrode contact by adopting a W plug at an upper part of a ferroelectric capacitor. SOLUTION: A semiconductor device includes a semiconductor substrate, a MOS transistor formed in the above semiconductor substrate and having an insulated gate and source/drain at its both sides, a ferroelectric capacitor formed in the upper part above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode, a metal film formed on the upper electrode and having 1/2 or less the thickness of the upper electrode, a metal film having a hydrogen resistance, an interlayer insulating film which embeds the ferroelectric capacitor and the metal film, a conductive plug extending to the metal film through the interlayer insulating film and including a conductive glue film and a tungsten object, and an aluminum interconnect line formed on the interlayer insulating film and connected to the conductive plug. COPYRIGHT: (C)2006,JPO&NCIPI
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