| 摘要 |
An amorphous silicon (a-Si) layer is first formed on a substrate, and the a-Si layer is next patterned to form silicon islands for defining device active regions. Then, a single shot laser beam with long pulse is utilized to irradiate each silicon island, and lateral growth crystallization is induced in each silicon island for transforming a-Si into polycrystalline silicon (poly-Si). Finally, the general subsequent processes for thin film transistor (TFT) fabrication are performed in turn to fabricate poly-Si TFTs.
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