| 摘要 |
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100 . Recesses 105 a to 105 d corresponding to recesses 101 a to 101 d of the substrate 100 are formed on the surface of the insulating film 103 . The surface of this insulating film 103 is flattened to form the under insulating layer 104 . By this flattening process, the distance L 1 , L 2 , . . . , Ln between the recesses 106 a, 106 b, 106 d of the under insulating layer 104 is made 0.3 mum or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106 a, 106 b, 106 d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
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