| 摘要 |
<p>A method for fabricating a solid-state image pickup device using CCD is disclosed. The method can form poly silicon electrodes by a Salicide process to decrease the thickness of the poly silicon electrodes and to reduce resistance of the poly silicon electrodes. The method for fabricating a solid-state image pickup device using charged-coupled devices (CCD) including an n-type impurity doped region and buried charged-coupled devices (BCCD) region formed on a surface of the semiconductor substrate. Especially, the method comprises the steps of: forming a first protective film on the n-type impurity doped region and the BCCD region; forming a first poly silicon electrode on the first protective film of the upper part of the BCCD region by a Salicide process; forming an interlayer oxidation film on the first poly silicon electrode and forming a second poly silicon electrode on the interlayer oxidation film to overlap with a part of the first poly silicon electrode by Salicide process; and forming a second protective film, a metal light shielding film, a BPSG film, a pssivation film or a planarizing film after forming the second poly silicon electrode. Therefore, the method according to the present invention can prevent problems generated in the subsequent processes after forming poly silicon electrodes by the Salicide process to decrease the thickness of the poly silicon electrodes and to reduce resistance of the poly silicon electrodes and enhance the electrical characteristics of the solid-state image pickup device.</p> |
