发明名称 Aluminumnitridsinterkörper, Gegenstand mit eingebettetem Metall, elektronisch funktionalem Material und elektrostatische Einspannvorrichtung
摘要 In AlN crystal grains constituting a sintered body, is contained: 150 ppm - 0.5 wt.%, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt.% of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 mu m and show a main peak in the wavelength range of 350 - 370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0 x 10<12> OMEGA .cm.
申请公布号 DE69736205(D1) 申请公布日期 2006.08.03
申请号 DE1997636205 申请日期 1997.03.26
申请人 NGK INSULATORS, LTD. 发明人 KATSUDA, YUJI;MORI, YUKIMASA;TAKAHASHI, MICHIO;BESSHO, YUKI
分类号 H01L21/68;B23Q3/15;C04B35/581;H01L21/683 主分类号 H01L21/68
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