发明名称 |
Aluminumnitridsinterkörper, Gegenstand mit eingebettetem Metall, elektronisch funktionalem Material und elektrostatische Einspannvorrichtung |
摘要 |
In AlN crystal grains constituting a sintered body, is contained: 150 ppm - 0.5 wt.%, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt.% of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 mu m and show a main peak in the wavelength range of 350 - 370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0 x 10<12> OMEGA .cm. |
申请公布号 |
DE69736205(D1) |
申请公布日期 |
2006.08.03 |
申请号 |
DE1997636205 |
申请日期 |
1997.03.26 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KATSUDA, YUJI;MORI, YUKIMASA;TAKAHASHI, MICHIO;BESSHO, YUKI |
分类号 |
H01L21/68;B23Q3/15;C04B35/581;H01L21/683 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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