VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

摘要

The invention provides an (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.