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发明名称
Fabricating method of gate oxidation layer in semiconductor device
摘要
申请公布号
KR100609225(B1)
申请公布日期
2006.08.02
申请号
KR20040115682
申请日期
2004.12.29
申请人
发明人
分类号
H01L21/31;H01L21/336
主分类号
H01L21/31
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代理人
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