Method for manufacturing integrated devices including electromechanical microstructures, without residual stress

摘要

On a substrate (20) of semiconductor material, a sacrificial region (21) is formed and an epitaxial layer (25) is grown; then a stress release trench (31) is formed, surrounding an area (33) of the epitaxial layer (25), where an integrated electromechanical microstructure is to be formed; the wafer (28) is then heat treated, to release residual stress. Subsequently, the stress release trench (31) is filled with a sealing region (34) of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region (34), a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.