A memory device with a ramp-like voltage biasing structure based on a current generator

摘要

A memory device (100) is proposed. The memory device includes a plurality of memory cells (Mc) each one for storing a value, at least one reference cell (Mr 0 -Mr 2 ), biasing means (115) for biasing a set of selected memory cells and the at least one reference cell with a biasing voltage (Vc,Vr) having a substantially monotone time pattern, means (130) for detecting the reaching of a threshold value by a current (Ic,Ir) of each selected memory cell and of each reference cell, and means (145) for determining the value stored in each selected memory cell according to a temporal relation of the reaching of the threshold value by the currents of the selected memory cell and of the at least one reference cell. The biasing means includes means (305) for applying a predetermined biasing current (Ib) to the selected memory cells and to the at least one reference cell.