| 摘要 |
<p>A method for producing a semiconductor device which contains few voids in its solder bonded layers, by bonding a laminate using a soldering process for a short amount of time. The laminate has an insulator substrate, provided with a metal circuit sheet which is laminated on a metal base with a solder layer there between, on which a silicon chip is laminated with a solder layer there between. A laminate including a metal base, a solder sheet, an insulator substrate, a second solder sheet, and a silicon chip is placed in a reduced pressure furnace. After evacuating the inside of the furnace, hydrogen is introduced into therein until the pressure therein is higher than atmospheric pressure. After heating and melting the solder, the inside of the furnace is evacuated to remove voids in the solder, and hydrogen is again introduced to prevent tunnel-like holes produced by the travelling of the voids in the solder from forming, and in order to obtain a uniform solder fillet shape. The laminate is then rapidly cooled to make the solder structure finer, thereby increasing the rate of creep of the solder used to bond the insulator substrate and the metal base, in order to quickly remove warping of the metal plate and return it to its original state. <IMAGE></p> |
