| 摘要 |
<p>PROBLEM TO BE SOLVED: To peel off a thin film device from a substrate without damaging the device and to transfer the device to another substrate. SOLUTION: In this method for producing a thin-film device, a first separation layer 120, consisting of an amorphous silicon film containing hydrogen, is formed on a first substrate 100 in the first process. Then in the second process, a thin- film device layer 140 is formed on the first separation layer 120. Then in the third process, a second substrate 180 is stuck to the upper face of the thin film device layer 140, and the first separation layer 120 is irradiated with laser beams to cause the phase transition of the first separation layer 120 from the amorphous silicon film into a polysilicon film and to generate hydrogen gas. Thus, peeling phenomenon is caused in the first separation layer 120 to cause the first substrate 100 to peel off. In this process, the energy density of the laser beams is controlled at first to be low and is gradually increased as the hydrogen comes out.</p> |
