MOS-Gated Power Device Having Extended Trench And Doping Zone And Process For Forming Same,申请号KR20000025222-传众专利搜索

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发明名称	MOS-Gated Power Device Having Extended Trench And Doping Zone And Process For Forming Same
摘要
申请公布号	KR100607526(B1)	申请公布日期	2006.08.02
申请号	KR20000025222	申请日期	2000.05.12
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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