| 摘要 |
1,019,332. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Feb. 28, 1963 [June 19, 1962; Aug. 28, 1962], No. 8163/63. Heading H1K. In making a semi-conductor device, the semi-conductor body, after a metal electrode has been alloyed to it, is heated in a gaseous medium containing the vapours of nitric and hydrofluoric acids. The body is held at a temperature above that of the vapours to prevent them condensing on the body and thus conveying metal ion impurities into it. In the embodiment a silicon disc is alloyed between gold-antimony and aluminium foils backed by molybdenum plates and the resulting assembly subject to the treatment with acid vapour in a polystyrene vessel. The gaseous medium; the composition of which is given, may include nitrogen, rare gases, air or oxygen. After the treatment, which may also be applied to germanium transistor and four layer element, the assembly is coated with lacquer. |
