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发明名称
半导体元件及其制造方法,和记忆体元件
摘要
一种整合于一绝缘层上有矽之单电晶体随机处理记忆体具有一电容器结构,此电容器结构系埋藏在至少部分之SOI基底之电容器沟槽中,且一闸极结构系形成在SOI基底上。一上电极电容器结构系和闸极结构之闸电极同时形成,且两者由相同之材料所组成。一电容器结构之电容器介电层系和和闸极结构之闸极介电层同时形成,且两者由相同之材料所组成。
申请公布号
TW200627590
申请公布日期
2006.08.01
申请号
TW095100048
申请日期
2006.01.02
申请人
台湾积体电路制造股份有限公司
发明人
涂国基
分类号
H01L21/8239;H01L27/105
主分类号
H01L21/8239
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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