| 摘要 |
One embodiment of the present invention provides a system that writes to a cell in a memory using a low-voltage-swing signal across a pair of global bit-lines. During operation, the system receives a low-voltage-swing signal across a pair of global bit-lines, which is too low to reliably write the memory cell. Next, the system converts the low-voltage-swing signal to a high-voltage-swing signal, which is adequate to reliably write the memory cell. The system then writes to the memory cell by applying the high-voltage-swing signal across a pair of local bit-lines that are coupled to the memory cell. The use of low-voltage-swing signals on the global bit-lines reduces overall power consumption. Furthermore, in one embodiment of the present invention, the voltage conversion is achieved using a pair of cross-coupled NMOS transistors whose sources are directly or indirectly coupled with the global bit-lines, and whose drains are directly or indirectly coupled with the local bit-lines.
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