| 摘要 |
A method for the production of individual integrated circuit arrangements from a wafer composite is disclosed, whereby the wafer is fixed with the component side (FS) on a support, the individual circuit arrangements ( 21 ) are separated on the support body by the etching of separating trenches ( 27 ) and individually lifted from the support body. The semiconductor substrate ( 20 ) is reduced in thickness during the fixing of the wafer to the support body, preferably to a substrate thickness of less than 100 mum. A reverse face metallization ( 31 ) is deposited on the back face (RS) of the thinned substrate, preferably after separation of the circuit arrangements on the support body.
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