发明名称 Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus
摘要 A method of forming an inorganic alignment film is provided comprising a first milling step of irradiating ion beams to a surface of a base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle theta<SUB>a </SUB>with respect to a direction orthogonal to the surface of the base substrate, a film-forming step of forming a film made substantially of an inorganic material on the base substrate to which the ion beams are irradiated, and a second milling step of irradiating ion beams to a surface of the film from a direction inclined at a predetermined angle theta<SUB>b </SUB>with respect to the direction orthogonal to the surface of the film.
申请公布号 US7084946(B2) 申请公布日期 2006.08.01
申请号 US20040931808 申请日期 2004.09.01
申请人 SEIKO EPSON CORPORATION 发明人 OTA HIDENOBU;ENDO YUKIHIRO;IWAMOTO OSAMU
分类号 G02F1/1337;B05D3/00;C09K19/00;C23C14/46;G02F1/133;G02F1/13357;G03B21/00 主分类号 G02F1/1337
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