发明名称 |
Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus |
摘要 |
A method of forming an inorganic alignment film is provided comprising a first milling step of irradiating ion beams to a surface of a base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle theta<SUB>a </SUB>with respect to a direction orthogonal to the surface of the base substrate, a film-forming step of forming a film made substantially of an inorganic material on the base substrate to which the ion beams are irradiated, and a second milling step of irradiating ion beams to a surface of the film from a direction inclined at a predetermined angle theta<SUB>b </SUB>with respect to the direction orthogonal to the surface of the film.
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申请公布号 |
US7084946(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20040931808 |
申请日期 |
2004.09.01 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
OTA HIDENOBU;ENDO YUKIHIRO;IWAMOTO OSAMU |
分类号 |
G02F1/1337;B05D3/00;C09K19/00;C23C14/46;G02F1/133;G02F1/13357;G03B21/00 |
主分类号 |
G02F1/1337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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