发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device has an active element structure formed on a semiconductor substrate. A first insulating film is provided above the semiconductor substrate. A first interconnect layer composed of copper is provided in a surface of the first insulating film. A second insulating film is provided on the first insulating film. A connection hole is formed in the second insulating film and has its bottom connected to the first insulating layer. A connection plug composed of a single crystal of copper is filled in the connection hole so that no other crystals of copper are provided in the connection hole. An interconnect trench is formed in a surface of the second insulating film and has its bottom connected to the connection hole. A second interconnect layer is provided in the interconnect trench.
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申请公布号 |
US7084510(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20040765833 |
申请日期 |
2004.01.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGASHI KAZUYUKI;MATSUNAGA NORIAKI |
分类号 |
H01L29/40;H01L21/3205;H01L21/44;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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