MULTIBIT SINGLE CELL MEMORY HAVING TAPERED CONTACT

摘要

An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element (36) with multibit storage capabilities and having at least one contact (6) for supplying electrical input signals to set the memory element to a selected resistance value and a second contact (8) tapering to a peak (16) adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.