发明名称 Semiconductor circuit with multiple contact sizes
摘要 A semiconductor circuit comprising a semiconductor die and a package substrate. In one embodiment, a first plurality of conductive bumps serves as a portion of a conductive path between contacts on the semiconductor die and contacts on the package substrate. A second plurality of conductive bumps serves as a portion of a conductive path between other contacts on the die and contacts on the package substrate. Each of the bumps in the first plurality of conductive bumps is larger than each of the bumps in the second plurality of conductive bumps. In another embodiment, the average size of the first plurality of conductive bumps may be at least 20% larger (or greater) than the average size of the second plurality of bumps.
申请公布号 US7084500(B2) 申请公布日期 2006.08.01
申请号 US20030696017 申请日期 2003.10.29
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SWNSON LELAND;HOWARD GREGORY ERIC
分类号 H01L29/40;H01L23/31;H01L23/485;H01L23/498;H01L23/58 主分类号 H01L29/40
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