发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a bit line, a memory cell coupled to the bit line and a word line coupled to the memory cell. A first time between receiving a write command for a write operation in order to write data to the memory cell and the beginning of the write operation is different from a second time between receiving a refresh command for a refresh operation in order to refresh data stored in the memory cell and beginning the write operation.
申请公布号 US7085881(B2) 申请公布日期 2006.08.01
申请号 US20030681184 申请日期 2003.10.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUCHIDA KENJI;TODA HARUKI;KUYAMA HITOSHI
分类号 G06F12/02;G11C11/407;G11C7/10;G11C7/22;G11C16/02 主分类号 G06F12/02
代理机构 代理人
主权项
地址