发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a bit line, a memory cell coupled to the bit line and a word line coupled to the memory cell. A first time between receiving a write command for a write operation in order to write data to the memory cell and the beginning of the write operation is different from a second time between receiving a refresh command for a refresh operation in order to refresh data stored in the memory cell and beginning the write operation.
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申请公布号 |
US7085881(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20030681184 |
申请日期 |
2003.10.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TSUCHIDA KENJI;TODA HARUKI;KUYAMA HITOSHI |
分类号 |
G06F12/02;G11C11/407;G11C7/10;G11C7/22;G11C16/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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