TEST ELEMENT GROUP STRUCTURES HAVING 3 DIMENSIONAL SRAM CELL TRANSISTORS,申请号KR20050007740-传众专利搜索

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发明名称	TEST ELEMENT GROUP STRUCTURES HAVING 3 DIMENSIONAL SRAM CELL TRANSISTORS
摘要
申请公布号	KR20060086756(A)	申请公布日期	2006.08.01
申请号	KR20050007740	申请日期	2005.01.27
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LIM, BO TAK;SEO, JONG SOO
分类号	H01L27/11	主分类号	H01L27/11
代理机构		代理人
主权项
地址

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