| 摘要 |
A method for fabricating a semiconductor device that prevents the formation of a side etch caused by fluoride (CF<SUB>x</SUB>) produced when a barrier insulating film is etched. As shown in FIG. 1 (G), an opening in the shape of a wiring trench is made in an interlayer dielectric. Then, as shown in FIG. 1 (H), a barrier insulating film is etched. As a result, fluoride will be produced. By performing plasma etching by the use of gas which contains hydrogen atoms in the following process shown in FIG. 1 (I), the fluoride is converted to a highly volatile compound, such as hydrogen fluoride, and is removed.
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