发明名称 |
Methods of fabricating a semiconductor device having MOS transistor with strained channel |
摘要 |
Methods of fabricating a semiconductor device having a MOS transistor with a strained channel are provided. The method includes forming a MOS transistor at a portion of a semiconductor substrate. The MOS transistor is formed to have source/drain regions spaced apart from each other and a gate electrode located over a channel region between the source/drain regions. A stress layer is formed on the semiconductor substrate having the MOS transistor. The stress layer is then annealed to convert a physical stress of the stress layer into a tensile stress or increase a tensile stress of the stress layer.
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申请公布号 |
US7084061(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20040799788 |
申请日期 |
2004.03.12 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
SUN MIN-CHUL;KU JA-HUM;JUNG SUG-WOO;YOUN SUN-PIL;KIM MIN-JOO;ROH KWAN-JONG |
分类号 |
H01L21/335;H01L21/44;H01L29/78 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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