| 摘要 |
A method of manufacturing a semiconductor component includes: providing a semiconductor substrate ( 210, 510 ); forming a trench ( 130, 430 ) in the semiconductor substrate to define a plurality of active areas separated from each other by the trench; forming a buried layer ( 240, 750 ) in the semiconductor substrate underneath a portion of the trench, where the buried layer is at least partially contiguous with the trench; after forming the buried layer, depositing an electrically insulating material ( 133, 810 ) in the trench; forming a collector region ( 150, 950 ) in one of the plurality of active areas, where the collector region forms a contact to the buried layer; forming a base structure over the one of the plurality of active areas; and forming an emitter region over the one of the plurality of active areas.
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