发明名称 Highly compact non-volatile memory and method therefor with internal serial buses
摘要 A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. Redundant circuits among each stack are factored out. In one aspect, a serial bus allows communication between components in each stack, thereby reducing the number of connections in a stack to a minimum. A bus controller sends control and timing signals to control the operation of the components and their interactions through the serial bus. In a preferred embodiment, the bus transactions of corresponding components in all the similar stacks are controlled simultaneously.
申请公布号 US7085159(B2) 申请公布日期 2006.08.01
申请号 US20050122738 申请日期 2005.05.05
申请人 发明人
分类号 G11C16/10;G11C7/10;G11C16/26 主分类号 G11C16/10
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