Method of manufacturing semiconductor device, film-forming apparatus, and storage medium

摘要

In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.