| 摘要 |
A method of fabricating a CMOS (complementary metal oxide semiconductor) transistor includes manufacturing steps, by which adverse transistor characteristics can be prevented from being degraded by high-temperature annealing for hardening a screen oxide layer. The method includes steps of forming a gate on a semiconductor substrate with a gate oxide layer therebetween, forming a screen oxide layer on the substrate and the gate, forming a nitride layer on the screen oxide layer, forming LDD regions in the substrate substantially aligned with the gate, removing the nitride layer, forming a spacer on the screen oxide layer and on at least a portion of a sidewall of the gate, and forming in the substrate source/drain regions extending from the LDD regions respectively in the substrate substantially aligned with the spacer.
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