发明名称 CMP system for metal deposition
摘要 A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
申请公布号 US7084059(B2) 申请公布日期 2006.08.01
申请号 US20030347831 申请日期 2003.01.21
申请人 ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 发明人 THOMAS TERENCE M.;SO JOSEPH K.
分类号 H01L21/44;B24B37/04;H01L21/288;H01L21/321;H01L21/768 主分类号 H01L21/44
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