发明名称 |
CMP system for metal deposition |
摘要 |
A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
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申请公布号 |
US7084059(B2) |
申请公布日期 |
2006.08.01 |
申请号 |
US20030347831 |
申请日期 |
2003.01.21 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
THOMAS TERENCE M.;SO JOSEPH K. |
分类号 |
H01L21/44;B24B37/04;H01L21/288;H01L21/321;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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