发明名称 COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR USING REFLECTION GRATING AND MANUFACTURING METHOD THEREOF
摘要 A CMOS image sensor having a reflection grating adapted to reflect and refract light not parallel to an optical axis is disclosed. The CMOS image sensor includes at least one photodiode, a photo-shielding film, a first interlayer insulation film, a color filter, a second interlayer insulation film, and at least one microlens, which are successively laminated on a substrate, and at least one reflection grating positioned between each microlens to reflect light which is incident through the edge of the lens in a direction not parallel to an optical axis and to refract the light with the grating so that the light is incident to the inside and is collected to the photodiode through the color filter.
申请公布号 KR100605814(B1) 申请公布日期 2006.08.01
申请号 KR20040086305 申请日期 2004.10.27
申请人 发明人
分类号 H01L27/146;H01L31/10 主分类号 H01L27/146
代理机构 代理人
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