Methods for programming user data and confirmation information in nonvolatile memory devices

摘要

Method of programming nonvolatile memory devices are provided in which data is programmed into a first plurality of memory cells of the nonvolatile memory device. At the same time associated programming confirmation information is programmed into at least one second memory cell of the nonvolatile memory device. Then, a determination is made as to whether the data was correctly programmed into the first plurality of memory cells based on an evaluation of (1) the threshold voltage distributions of at least some of the first plurality of memory cells and (2) the threshold voltage distribution of the at least one second memory cell. Methods of resuming a data programming operation after an interruption such as a loss of power are also provided.