首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE HAVING SILICIDE LAYER FABRICATED THEREBY
摘要
申请公布号
KR20060086144(A)
申请公布日期
2006.07.31
申请号
KR20050007068
申请日期
2005.01.26
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YOUN, KI SEOG;AHN, JONG HYON;BAE, SU GON
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
您可能感兴趣的专利
System and method for detection of intrusion attacks on packets transmitted on a network
Method of device-to-device communications in hybrid distributed device control networks
Delta-sigma modulator using LC resonators
Method and apparatus for initiating compression of headers of packets and refreshing the context related to the packets
Performance modeling in a VDSL network
Geographical client distribution methods, systems and computer program products
Solid state imager with reduced number of transistors per pixel
Reduced coherence symmetric grazing incidence differential interferometer
Hybrid vehicle
Unique address space and method for a transport network
Information display system and portable information terminal
Particulate info to field units
Arrangement and method for transmitting data over a TDM bus
Method and apparatus for coordinating dynamic memory deallocation with a redundant bit line steering mechanism
Page back system and method for remote paging in a control system
Emergency lighting function illumination appliance
Binary probe and clamp composition
Shot-gun sequencing and amplification without cloning
Carboxylic acid reductase polypeptide, nucleotide sequence encoding same and methods of use
Isothermal chimeric primer nucleic acid amplification methods using blocking oglionucleotide
