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发明名称
Method of forming an isolation layer in a semiconductor device
摘要
申请公布号
KR100607330(B1)
申请公布日期
2006.07.28
申请号
KR20040085429
申请日期
2004.10.25
申请人
发明人
分类号
H01L21/762
主分类号
H01L21/762
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代理人
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地址
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