DIELECTRIC STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT, METHOD OF FORMING THE DIELECTRIC STRUCTURE, NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING THE DIELECTRIC STRUCTURE, AND METHOD OF MANUFACTURING THE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号
KR20060085735(A)
申请公布日期
2006.07.28
申请号
KR20050006547
申请日期
2005.01.25
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JONG CHEOL;KIM, SUNG TAE;KIM, YOUNG SUN;YOO, CHA YOUNG;PARK, YOUNG GEUN;YEO, JAE HYUN;KIM, YUN SEOK;LIM, HA JIN;CHOI, JAE HYOUNG;NAM, GAB JIN
