| 摘要 |
<p>PURPOSE: A method of forming a bonding pad of a semiconductor device is provided to minimize oxide on the pad by performing an additional process on by-products using multi-step heat treatments. CONSTITUTION: A metal pad(12) is formed on a substrate(11) with a predetermined structure. A protecting layer(13) is formed thereon. A polyimide layer(14) is formed on the protecting layer and patterned. A heat treatment is performed on the patterned polyimide layer. The protecting layer is selectively etched. By-products are removed from the pad and the polyimide layer by performing multi-step heat treatments under predetermined conditions.</p> |
