METHOD FOR PROCESSING SUBSTRATE

摘要

Disclosed is a method for processing substrate which enables an insulating film formed by a plasma CVD method using an organic silane gas to have a low dielectric constant and to maintain mechanical strength. A method for processing substrate comprising a film-forming step wherein an insulating film is formed on a substrate to be processed by supplying a first process gas containing an organic silane gas onto the substrate and exciting a plasma thereon, and a post-treatment step following the film-forming step wherein the insulating film is treated by supplying a second process gas containing an H2 gas onto the substrate and exciting a plasma thereon is characterized in that the plasma excitation in the post-treatment step is carried out by means of a microwave plasma antenna.