| 摘要 |
PROBLEM TO BE SOLVED: To provide a cell power switching circuit in a nonvolatile memory device like an SRAM and a method for applying a cell power voltage thereby. SOLUTION: The power switching circuit comprises a first power switching portion which selectively outputs one of a first power supply voltage and a second power supply voltage having a higher level than the first power supply voltage to a first switching output terminal according to an applied first switch control signal, a second power switching portion which outputs, as a cell power voltage, one of the output voltage at the first switching output terminal and a third power supply voltage having a lower level than the first power supply voltage to a second switching output terminal according to an applied second switch control signal, and a cell power control portion which controls states of the first and second switch control signals so that the cell power voltage is applied as the third power supply voltage in a standby state and that when the standby state is switched to an operating state the cell power voltage is supplied as the second power supply voltage during a predefined period of time and then as the first power supply voltage. COPYRIGHT: (C)2006,JPO&NCIPI
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