发明名称 |
Semiconductor device and method for production thereof |
摘要 |
Disclosed herein is a semiconductor device with improved electromigration durability and a method for producing the semiconductor device. A semiconductor device includes: an interlayer insulating film formed on a first metal wiring; a second metal wiring formed by embedding in the interlayer insulating film; a metal contact formed by embedding in the interlayer insulating film, for connecting between the first metal wiring and the second metal wiring; a first capping layer formed between the first metal wiring and the metal contact; and a barrier metal layer formed between the second metal wiring and the interlayer insulating film, for preventing metal diffusion in the second metal wiring. A method of producing a semiconductor device includes the steps of: forming an interlayer insulating film on a substrate having a first metal wiring formed thereon; forming in the interlayer insulating film a via hole reaching the first metal wiring; selectively forming a first capping layer only on the bottom of the via hole; forming a barrier metal layer on the inner wall of the via hole; and embedding a metal layer in the via hole.
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申请公布号 |
US2006163739(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050321850 |
申请日期 |
2005.12.29 |
申请人 |
KOMAI NAOKI;KANAMURA RYUICHI;OOKA YUTAKA |
发明人 |
KOMAI NAOKI;KANAMURA RYUICHI;OOKA YUTAKA |
分类号 |
H01L21/44;H01L23/48;H01L23/52 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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