| 摘要 |
A semiconductor device and method of its manufacturing method are provided for realizing smaller low voltage transistors while maintaining the characteristics of high voltage transistors. A first transistor formation region is separated by selectively leaving first element-separating insulator film. A second transistor formation region is separated by selectively oxidized second element-separating insulator film. On the region separated by first element-separating insulator film, a first transistor having a first channel-formation region, first source/drain regions, and first gate-insulation film with a first film thickness and first gate electrode are formed. On the region separated by second element-separating insulator film, second transistors having a second channel-formation region, second source/drain region second gate-insulation film with thickness thinner than the first film thickness, and a second gate electrode are formed.
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